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Wissenschaftliche Abschlussarbeit - Detailansicht

Bereich Ingenieurwissenschaften - Fakultät Elektrotechnik und Informationstechnik - Institut für Halbleiter- und Mikrosystemtechnik - Professur für Halbleitertechnik

Advanced aspects of metal atromic layer deposition: barrier properties against copper diffusion & area selectivity
Art der Abschlussarbeit
  • Raman, Prathibha
  • Prof. Dr. rer. nat. Johann Wolfgang Bartha
  • Dipl.-Ing. Marcel Junige
  • Dipl.-Ing. Sebastian Killge
Copper is widely being used in the interconnect technology due to its advantages like low resistivity. But copper diffuses into underlying silicon di oxide and silicon which is undesirable. Therefore, to prevent this a diffusion barrier is required. With the miniaturisation of integrated circuits, the conventional barrier/adhesive agent/seed layer systems also need scaling. However, there are limitations in scaling because there is requirement of minimum thickness of each to perform their function properly. Therefore, there is a need for a material system which combines the functions. In this work Ru│TaN system is investigated for its barrier properties using TVS BTS technique. Atomic layer deposition (ALD) is used to get highly conformal and uniform Ru│TaN system.
Also, with the miniaturisation of circuit elements, there is a need for novel bottom-up approaches to realise complex structures. One such approach is area selective ALD where with its distinct advantage, material can be deposited selectively only on the desired area. Area selective deposition can be achieved in three ways namely by area activation, area deactivation and inherent selectivity. In this work inherent area selectivity of Ru on different starting materials is investigated. Also, the dependence of selective ALD on process parameters like temperature is studied.
Stand: 12.02.2019