@article{aufsatz23751,
    affiliation = {Professur für Halbleitertechnik},
    title = {Novel anhanced stressors with graded encapsulated SiGe embedded in the source and drain areas},
    journal = {Materials Science and Engineering B 154-155},
    keywords = {SiGe, CMOS, Stressor, Epitaxy, Erosion, CVD},
    pages = {95--97},
    year = {2008},
    peerreview = {Nein},
    doi = {http://},
    author = {Naumann, A. and Kronholz, S. and Mowry, A. and Ostermay, I. and Bierstedt, H. and Trui, B. and Dittmar, K. and Kuecher, P. and Bartha, J.W. and Kammler, T.}
}