@conference{aufsatz57829,
    affiliation = {Professur für Halbleitertechnik},
    title = {Demonstration of 22nm SRAM features with patternable hafnium oxide-based resist material using electron-beam lithography},
    journal = {Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832518 (19 March 2012), San Jose, California, USA, February 2012},
    keywords = {inorganic resist, XE15IB, e-beam direct write (EBDW), direct patternable, spin on hard mask, high resolution, 22 nm SRAM feature},
    isbn = {978-0-8194-8981-4},
    year = {2012},
    peerreview = {Ja},
    openaccess = {Nein},
    doi = {doi: 10.1117/12.917814},
    author = {Thrun, X. and Choj, K.-H. and Freitag, M. and Grenville, A. and Gutsch, M. and Hohle, C. and Stowers, J. K. and Bartha, J. W.}
}