@article{aufsatz73864,
    affiliation = {Professur für Halbleitertechnik},
    title = { Atomic layer deposition of tantalum oxide thin films using the precursor tert-butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film properties},
    journal = {Thin Solid Films},
    keywords = {Tantalum oxide (Ta2O5), Atomic layer deposition (ALD), Thin film, High-k dielectric, Metal-insulator-semiconductor capacitor, Dielectric constant, Equivalent oxide thickness},
    pages = {94--105},
    year = {2017},
    peerreview = {Ja},
    openaccess = {Nein},
    volume = {627},
    doi = { 10.1016/j.tsf.2017.02.047},
    author = {Henke, T. and Knaut, M. and Geidel, M. and Winkler, F. and Albert, M. and Bartha, J.W.}
}