@article{aufsatz81885,
    affiliation = {Professur für Optoelektronik},
    title = {Short-wavelength photoluminescence of SiO2 layers implanted with high doses of Si+, Ge+, and Ar+ ions},
    journal = {SEMICONDUCTORS},
    pages = {392--396},
    issn = {1063-7826},
    year = {1998},
    peerreview = {Nein},
    volume = {32},
    number = {4},
    doi = {doi:10.1134/1.1187417},
    author = {Kachurin, GA and Tyschenko, IE and Rebohle, L and Skorupa, W and Yankov, RA and Froeb, H and Boehme, T and Leo, K}
}