@article{aufsatz84487,
    affiliation = {Professur für Experimentalphysik/Photophysik/Nanooptik},
    title = {Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory},
    journal = {IEEE Transactions on Electron Devices},
    pages = {3356--3364},
    issn = {0018-9383},
    year = {2019},
    peerreview = {Ja},
    openaccess = {Nein},
    volume = {66},
    number = {8},
    doi = {doi:10.1109/TED.2019.2921618},
    author = {Ali, T. and Polakowski, P. and Büttner, T. and Kämpfe, T. and Rudolph, M. and Pätzold, B. and Hoffmann, R. and Czernohorsky, M. and Kühnel, K. and Steinke, P. and Zimmermann, K. and Biedermann, K. and Eng, L. M. and Seidel, K. and Müller, J.}
}